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Brand Name : HTOE
Model Number : CLDM-0808-0500-02
Place of Origin : Beijing, China
MOQ : 100 pcs
Price : Negotiable
Payment Terms : T/T
Supply Ability : 1000 pcs per month
Delivery Time : 15-30 working days
Packaging Details : Paper box
Output Power : 500 mW
Center Wavelength : 808±5 nm
Emitter Width : 50 μm
Cavity Length : 600 μm
Width : 500 μm
Operating Current : ≤ 0.6 A
500m watt , 808 nm Unmounted Single Emitter , Unmounted Laser Diode
Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.
HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.
Parameters(25℃)
Parameter | Unit | CLDM-0808-0500-02 | |
---|---|---|---|
Optical Parameter | Output Power Po | mW | 500 |
Center Wavelength λc | nm | 808 ± 5 | |
Beam Divergence θ⊥×θ∥ | deg | 38x10 | |
COD | W | ≥ 1.00 | |
Geometrical | Emitter Width | μm | 50 |
Width | μm | 500 | |
Cavity Length | μm | 600 | |
Electrical Parameter | Slope Efficiency Es | W/A | ≥ 1.10 |
Threshold Current Ith | A | ≤ 0.12 | |
Operating Current If | A | ≤ 0.6 | |
Operating Voltage Vf | V | ≤ 1.9 |
Notice
1. Item notice: CLDM( item model)-0808( center wavelength)-0500( output power)-02.
2. Data sheet is based on the result of testing under 25℃.
3. Data sheet is based on the C-Mount package testing.
4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
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808nm Wavelength 500mW output power Bare Laser Diode Chip Images |